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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
December 2004
RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Features
I Quad band, matched module I High efficiency- 55% GSM850/900, 50% DCS/PCS I Integrated power control function I I I I I Compact 7*10*1.6mm module InGaP HBT technology GPRS class 12 capable Ruggedness 10:1 50 dB power control range
General Description
The RMPA1850 power amplifier module (PAM) is designed for GSM/GPRS cellular handset applications. The PAM a fully input and output 50 matched. It also includes integrated power control and band select.
Functional Block Diagram
VCC2
12
DCS/PCS IN BAND SELECT TX EN VBAT VREG VRAMP GSM IN
1 2 3 4 5 6 7
Match
Match
Power Sensing
11 DCS/PCS OUT
CMOS Power Controller
10 VOUT
Match
Match
Power Sensing
9
GSM OUT
8
VCC2
(c)2004 Fairchild Semiconductor Corporation
1
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RMPA1850 Rev. A1
RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
GSM850/GSM900 BAND
Specification Parameter
Frequency
Min.
824 880
Typ.
Max.
849 915
Unit
MHz MHz dBm dBm % dBm
Condition
GSM850 band GSM900 band GSM850 band GSM900 band @ Pout max
Output Power
34 34.5
34.5 35 55 3 -10 -15 -30 -30 2.5:1 1.4 1.8
Power Added Efficiency Input Power Range 2nd Harmonics 3rd Harmonics Forward isolation Cross Isolation Input VSWR Vramp for Max. Pout Vramp for Min. Pout Power control range Ruggedness Stability Output Noise Power, 20 MHz offset
50 0
dBm dBm dBm dBm Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo
V V
0.3 50 no permanent damage -36 -82
dB
Vramp = 0.1 to 1.8V Output VSWR = 10:1, Pout 34.5 dBm
dBm dBm
Load 8:1 RBW = 100 KHz
DCS/PCS BAND
Specification Parameter
Frequency
Min.
1710 1850
Typ.
Max.
1785 1910
Unit
MHz MHz dBm dBm % dBm
Condition
DCS band PCS band DCS band PCS band @ Pout max
Output Power
32.5 32
33 32.5 50 3 -15 -10 -30 -20 2.5:1 1.4 1.8
Power Added Efficiency Input Power Range 2nd Harmonics 3rd Harmonics Forward isolation Cross Isolation Input VSWR Vramp for Max. Pout Vramp for Min. Pout Power control range Ruggedness Stability Noise Power, 20 MHz offset
45 0
dBm dBm dBm dBm Vramp, TX_EN = 0.2V, Pin = 5 dBm, @2fo
V V
0.3 50 no permanent damage -36 -82
dB
Vramp = 0.1 to 1.8V Output VSWR = 10:1,Pout 32.5dBm
dBm dBm
Load 8:1 RBW = 100 KHz, 20 MHz offset
1. VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, TX-EN = high, T = 25C, 12.5% duty cycle
2 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Absolute Ratings
Parameter
Supply Voltage, VBATT Power Control Voltage Input RF Power Duty Cycle at Max. Power Storage Temperature Operating Temperature -40 -30
Minimum
Maximum
+6 +2.5 +12 50 +150 +85
Units
V V dBm % C C
Recommended Operating Conditions
Specification Parameter
VBAT Supply Voltage VBAT Supply Leakage Current VREG Voltage VREG Current 2.7V
Min.
3.0V
Max.
3.5V 12A 2.8V 10mA 1A
Unit
4.8V
Condition (Temp = +25C, Vcc = 3.5V)
TX_EN = Low
2.9V TX_EN = High TX_EN = Low
TX_EN Logic Level to Enable TX_EN Logic Level to Disable Current into TX_EN Pin Current into Band Select Pin Band Select Logic Level to enable DCS Band Band Select Logic Level to enable GSM Band Vramp Pin Transconductance
1.9V 0.6V 0.1A 0.1A 1.9V 0.6V 83A/V 5A 5A
3 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Pout and PAE% vs. Frequency
VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, VRAMP = 1.6V, T = 25C, 25% duty cycle
36 35 Pout/dBm 34 33 32 31 30 824 848 freq/ MHz 880 914 PAE% 60% 55% 50% 45% 40% 35% 30% 25% 20% 15% 10% 5% 0%
36 35 Pout/dBm 34 33 32 31 30 1710 1785 1850 Freq/MHz 1910 60% 55% 50% 45% 40% 35% 30% 25% 20% 15% 10% 5% 0%
PAE%
PAE%
Pout/dBm
Power Control: Pout vs. VRAMP
VBATT = 3.5V, VREG = 2.8V, PIN = 3 dBm, T = 25C, 25% duty cycle
40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Vramp / V 40 35 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Pout / dBm
824MHz 848MHz 880MHz 915MHz
Pout / dBm
1710MHz 1785MHz 1850MHz 1910MHz
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2
1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
2
Vramp / V
4 RMPA1850 Rev. A1
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PAE%
Pout/dBm
RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Signal Descriptions
Pin
1 2 3 4 5 6 7 8 9 10 11 12
Function
DCS/PCS IN Band Select TX_EN VBAT VREG VRAMP GSM IN VCC2 GSM OUT VOUT DCS/PCS OUT VCC2 50 RF input of DCS/PCS band.
Description
Logic high for DCS/PCS and logic low for GSM850/EGSM900 band. Logic high to enable the PA module function. Power supply to the PA module. This should be connected to battery. The decoupling capacitor is required to filter the interference. Normally, 2.8 volts are required at this node for the operation of control circuits. Ramping signal from DAC to control the power level. 50 RF input of GSM850/EGSM900 band. Power supply for the driver stage of the GSM850/EGSM900 band. This is internally connected to VBAT node within the module. 50 RF output of GSM850/EGSM900 band. Power supply for the power stages of GSM850/EGSM900 and DCS/PCS band. This is internally connected to VBAT node within the module. 50 RF output of DCS/PCS band. Power supply for the driver stage of the GSM850/EGSM900 and DCS/PCS band. This is internally connected to VBAT node within the module.
VCC2 DCS/PCS IN 1 12 11 DCS/PCS OUT
BAND SELECT
2 3
TX EN
VBAT
4
10
VOUT
VREG
5
VRAMP
6
GSM IN
7
8 VCC2
9
GSM OUT
5 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Evaluation Board Schematic
VCC2 12 DCS/PCS IN BAND SELE CT TX EN VBAT
1F 1F
50 Ohm Microstrip
1 2 3 4 5 6 7
Match
Match
Power Sensing
DCS/PCS OUT 11
50 Ohm Microstrip
CMOS Power Controller
10
VOUT
VREG VRAMP
10F 1F 0 Ohm 2K Ohm 330pF 1nF
Match
Match
Power Sensing
9
GSM OUT
50 Ohm Microstrip
GSM IN
50 Ohm Microstrip 150 Ohm
8 VCC2
Evaluation Board
VBAT
47F
GND
1F
DCS/PCS IN
1F
10F
DCS/PCS OUT
1F 330pF
1nF 1F
2KOhm
1F
150Ohm
GSM IN
GSM OUT
0 Ohm 1F 1F
BS
TX EN
VREG
VRAMP
6 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Package Outline (All dimensions in mm)
RMPA1850
7 mm
10 mm
PIN 1
0.1 0.6
TOP VIEW
0.5 0.8 0.7 0.1 0.1
0.8 0.8 2.4 0.8
1.6
PIN 1
0.7
0.8
0.7
0.7 0.7
3.0
10 0.7
0.7
0.7 1.5 0.1
BOTTOM VIEW
0.44
SIDE VIEW
7 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Precautions to Avoid Permanent Device Damage: * Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should remain in their original packaging until component placement to ensure no contamination or damage to RF, DC & ground contact areas. * Device Cleaning: Standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. * Static Sensitivity: Follow ESD precautions to protect against ESD damage: * A properly grounded static-dissipative surface on which to place devices. * Static-dissipative floor or mat. * A properly grounded conductive wrist strap for each person to wear while handling devices. * General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not apply excessive pressure to the top of the lid. * Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are protected and require no special storage conditions. Once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. Device Usage: Fairchild RF recommends the following procedures prior to assembly. * Dry-bake devices at 125C for 24 hours minimum. Note: The shipping trays cannot withstand 125C baking temperature * Assemble the dry-baked devices within 7 days of removal from the oven. * During the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30C * If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. Solder Materials & Temperature Profile: * Reflow soldering is the preferred method of SMT attachment. Hand soldering is not recommended. - Reflow Profile * Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A typical heating rate is 1- 2C/sec. * Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at 150C. * Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering temperatures should be in the range 215-220C, with a maximum limit of 225C. * Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. The illustration below indicates the recommended soldering profile. * Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness. * Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat gun. The device should not be subjected to more than 225C and reflow solder in the molten state for more than 5 seconds. No more than 2 rework operations should be performed.
Recommended Solder Reflow Profile
240 220 200 183C 180 160 140 DEG (C) 120 100 80 60 40 20 0 0 60 120 TIME (SEC) 180 240 300 1C/SEC SOAK AT 150C FOR 60 SEC 45 SEC (MAX) ABOVE 183C 1C/SEC 10 SEC
8 RMPA1850 Rev. A1
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RMPA1850 Quad Band GSM/GPRS Power Amplifier Module
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I14
9 RMPA1850 Rev. A1
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